data sheet 1 2001-01-01 description this two-stage gaas mmic low noise amplifier is intended for use in radio link applications. it provides a gain of 18 db with a noise figure of less than 3 db. the device is fabricated with a 0.13 micron pseudomorphic ingaas/algaas/gaas high electron mobility transistor processing technology. 24 - 32 ghz gaas low noise amplifier mmic 24 - 32 ghz lna preliminary data sheet ? two-stage monolithic microwave integrated circuit (mmic) hemt amplifier (coplanar design) input/output matched to 50 ? frequency range: 24 ghz to 32 ghz gain > 18 db noise figure < 3 db chip size: 2.15 mm 1.45 mm esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code package 24 - 32 ghz lna ? on request chip electrical specifications ( v g = 0.1 v, v d = 5 v, i d = 85 ma) parameter limit values unit test conditions min. typ. max. frequency range 24 ? 32 ghz ? gain ? 18 ? db ? noise figure ? 3 ? db ? 1 db gain compression ? 12 ? dbm ? input return loss ? < ? 10 ? db ? output return loss ? < ? 10 ? db ?
gaas components 24 - 32 ghz lna data sheet 2 2001-01-01 measured data (on chip measurements) v gs = 0.1 v, v ds = 5 v, i ds = 85 ma; unless otherwise specified noise figure ghz 32 20 26 24 22 30 28 f 34 40 3 0 1 2 0 5 4 5 6 10 15 8 7 9 20 gain db 10 12 db 25 30 eht09214 mag (s21) 0 f -10 eht09216 10 20 30 50 ghz -5 0 5 10 15 20 25 30 db mag (s11) 0 f -40 eht09215 10 20 30 50 -30 -20 -10 0 10 db ghz
gaas components 24 - 32 ghz lna data sheet 3 2001-01-01 maximum ratings parameter symbol value unit drain voltage v d 5v gate voltage v g ? 2 ? + 0.8 v technology data parameter value chip thickness 95 m chip size 2.15 mm 1.45 mm dc/rf bond pads 100 m 100 m/90 m 60 m bond pad material au (plated gold) chip passivation sin (silicon nitride)
gaas components 24 - 32 ghz lna data sheet 4 2001-01-01 figure 1 bond plan recommendation of bonding conditions parameter thermocompression nailhead, without ultrasonic wedge bonding bond pull test mil 883, > 2 g table temp. 250 c 250 c 1 : 2.5 g tool temp. 180 c 150 c 2 : 3.1 g scrub 100 hz ? 3 : 3.2 g bond force 50 g 25 g 4 : 3.0 g wire diameter 25 m17 m 5 : 2.8 g eht09217 v d1 v g1 v g2 v d2 v g3 d3 v rf in gnd gnd gnd gnd rf out
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